#IBM and development partner #Samsung announced they've developed a process to manufacture a type of non-volatile RAM that is up to 100,000 times faster than #NAND flash and never wears out. The two companies collaborated to develop next-generation magnetoresistive RAM (MRAM) using spin-transfer torque (STT) technology, which would lead to low-capacity memory chips for Internet of Things sensors, wearables and mobile devices that currently use #NAND flash to store data.
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