Saturday, January 28, 2017

SK Hynix Lays Out Plans for 2017: 10nm-Class DRAM, 72-Layer 3D NAND

#SKHynix this week announced financial results for its fiscal year 2016 and also revealed general plans for 2017. As expected, the company intends to start volume production of new types of memory and expand production capacities. What is noteworthy is that the company will primarily invest in the expansion of #NAND flash manufacturing capacities, rather than the expansion of DRAM production, in the short-term future. DRAM: 21 nm Ramping, 18 nm(?) on Track for 2H 2017 SK Hynix began to make DRAM using its 21 nm fabrication process in late 2015. The manufacturer has been gradually expanding usage of the technology as well as improving its yields since then. By now, SK Hynix makes a wide range of its products (including mainstream DRAM, mobile DRAM and specialized memory) using its 21 nm manufacturing process. This week the company confirmed that it intends to start volume production of DRAM using its 10 nm-class process technology (which industry experts believe is 18 nm) this year

http://www.anandtech.com/show/11079/sk-hynix-lays-out-plans-for-2017-10nm-dram-72-layer-nand

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