#Samsung isn't the only semiconductor company that's upping its 3D flash game. #Toshiba America Electronic Components this week announced the latest advance in #BiCSFlash, the company's #3DNAND flash technology, setting the stage for higher-capacity solid-state drives (SSDs) and flash-based arrays for the data center. Claiming an industry first, Toshiba unveiled its new 4-bit-per-cell, quadruple-level cell (QLC) 3D flash memory chips. Compared to the preceding 3-bit-per-cell, triple-level cell (TLC) technology's die capacity of 512Gb, or 64GB, from Toshiba, the newer, 64-layer QLC BiCS Flash memory technology yields a record-breaking die capacity of 768Gb or 96GB. Using a stacked architecture comprised of 16 dies, Toshiba claims it can deliver 1.5TB of flash-storage capacity in a single package, another record.
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