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Showing posts with label Magnetic Memory. Show all posts
Showing posts with label Magnetic Memory. Show all posts

Friday, September 8, 2017

Fast magnetic writing of data

In 1956, IBM introduced the first magnetic hard disc, the RAMAC. ETH researchers have now tested a novel magnetic writing technology that could soon be used in the main memories of modern computers. (Photograph: IBM) Abstract: For almost seventy years now, magnetic tapes and hard disks have been used for data storage in computers. In spite of many new technologies that have been developed in the meantime, the controlled magnetization of a data storage medium remains the first choice for archiving information because of its longevity and low price. As a means of realizing random access memories (RAMs), however, which are used as the main memory for processing data in computers, magnetic storage technologies were long considered inadequate. That is mainly due to its low writing speed and relatively high energy consumption. Fast magnetic writing of data Zurich, Switzerland | Posted on September 7th, 2017 Pietro Gambardella, Professor at the Department of Materials of the ETH Zurich, and his colleagues, together with colleagues at the Physics Department and at the Paul Scherrer Institute (PSI), have now shown that using a novel technique, magnetic storage can still be achieved very fast and without wasting energy. Magnetization inversion without coils In traditional magnetic data storage technologies, tape or disk data carriers coated with a cobalt alloy are used. A current-carrying coil produces a magnetic field that changes the direction of magnetization in a small portion of the data carrier. Compared to the speeds of modern processors, this procedure is very slow, and the electric resistance of the coils leads to energy loss. It would, therefore, be much better if one could change the magnetization direction directly, without taking a detour via magnetic coils. In 2011, Gambardella and his colleagues already demonstrated a technique that could do just that: An electric current passing through a specially coated semiconductor film inverted the magnetization in a tiny metal dot. This is made possible by a physical effect called spin-orbit-torque. In this effect, a current flowing in a conductor leads to an accumulation of electrons with opposite magnetic moment (spins) at the edges of the conductor. The electron spins, in turn, create a magnetic field that causes the atoms in a nearby magnetic material to change the orientation of their magnetic moments. In a new study the scientists have now investigated how this process works in detail and how fast it is. The results were recently published in the scientific journal Nature Nanotechnology. Spatial resolution with X-rays In their experiment, the researchers inverted the magnetization of a cobalt dot having a diameter of just 500 nanometres using electric current pulses that flowed through an adjacent platinum wire. During this process, they exposed the cobalt dot to strongly focused X-rays that were created at the Swiss Light Source of PSI. The X-rays scanned the dot successively with a spatial resolution of 25 nanometres. How strongly the dot absorbed the X-rays at a particular point depended on the local magnetization direction. «In this way we obtained a two-dimensional image of the magnetization inside the cobalt dot and could watch as the current pulse gradually changed it», explains Manuel Baumgartner, lead author of the study and doctoral student in Gambardella's research group. The researchers were thus able to observe that the magnetization inversion happened in less than one nanosecond - considerably faster than in other recently studied techniques. «Moreover, we can now predict on the basis of the experimental parameters when and where the magnetization inversion begins and where it ends», Gambardella adds. In other techniques the inversion is also driven by an electric current, but it is triggered by thermal fluctuations in the material, which causes large variations in the timing of the inversion. Possible application in RAMs The researchers sent up to a trillion inversion pulses through the cobalt dot at a frequency of 20 MHz without observing any reduction in the quality of the magnetization inversion. «This gives us the hope that our technology should be suitable for applications in magnetic RAMs», says Gambardella's former postdoc Kevin Garello, also a lead author of the study. Garello now works at the IMEC research centre in Leuven, Belgium, investigating the commercial realization of the technique. In a first step, the researchers would now like to optimize their materials in order to make the inversion work even faster and at smaller currents. One additional possibility is to improve the shape of the cobalt dots. For now, those are circular, but other shapes such as ellipses or diamonds could make the magnetization inversion even more efficient, the researchers say. Magnetic RAMs could, among other things, make the loading of the operating system when booting a computer obsolete - the relevant programmes would remain in the working memory even when the power is switched off.

http://www.nanotech-now.com/news.cgi?story_id=54714

Thursday, August 24, 2017

Researchers create magnetic RAM

Random access memory, or RAM, is one of the principal components of any computer or smartphone. The most common type of RAM is known as dynamic random access memory, or DRAM for short. It is a semiconductor memory based on a simple principle. In DRAM, each memory cell consists of one capacitor and one transistor. The transistor is used to admit current into the condenser, allowing it to be charged and discharged. The electrical charge of the capacitor stores binary information, which is conventionally represented as zeros (uncharged) and ones (charged). "RAM technology has been rapidly advancing, with memory modules becoming ever faster. However, this type of memory has one major limitation that cannot be overcome: its low energy efficiency," says principal investigator Sergei Nikitov of MIPT. "In this paper, we present the magnetoelectric memory cell. It will reduce bit reading and writing energy consumption by a factor of 10,000 or more." A #MELRAM cell consists of two components with remarkable properties. The first is a #piezoelectric material. Piezoelectricity is a property of certain materials that are deformed in response to applied voltage and, conversely, generate voltage under mechanical stress. The other MELRAM component is a layered structure characterized by a #highmagnetoelasticity—the dependence of magnetization on the elastic strain. Because the structure is anisotropic—that is, it is organized differently along different axes,—it can be magnetized along two directions that correspond to the logical zero and one in binary code. In contrast to dynamic RAM, magnetoelectric memory cells are capable of maintaining their state: They need not be continually rewritten and do not lose information when power is cut off.

https://www.google.com/amp/s/phys.org/news/2017-08-magnetic-ram.amp#ampshare=https://phys.org/news/2017-08-magnetic-ram.html

Wednesday, July 19, 2017

Global Semiconductor Capital Equipment Market 2017-2021: Industry Analysis and Forecasts by Technavio

LONDON--(BUSINESS WIRE)--According to the latest market study released by Technavio, the global semiconductor capital equipment market is expected to grow at a CAGR of more than 6% during the forecast period. Global semiconductor capital equipment market is expected to grow at a CAGR of over 6% through 2021. Tweet this This research report titled ‘Global Semiconductor Capital Equipment Market 2017-2021’ provides an in-depth analysis of the market in terms of revenue and emerging market trends. This report also includes an up to date analysis and forecasts for various market segments and all geographical regions. This report is available at a USD 1,000 discount for a limited time only: View market snapshot before purchasing Buy 1 Technavio report and get the second for 50% off. Buy 2 Technavio reports and get the third for free. The market research analysis categorizes the global semiconductor capital equipment market into three major end-user segments. They are: Foundries Memory manufacturers IDMs Looking for more information on this market? Request a free sample report Technavio’s sample reports are free of charge and contain multiple sections of the report including the market size and forecast, drivers, challenges, trends, and more. Foundries The foundries segment dominated the global semiconductor capital equipment market in 2016, with a share of more than 63%. The changing business environment in the semiconductor industry is the major driving factor behind this migration to fabless model. Thus, the semiconductor market will witness a considerable demand for devices such as logic, analog, memory, discrete, opto, sensor, and other semiconductor devices during the forecast period. To meet this demand, foundries need to upgrade their manufacturing and inspection equipment as well as ensure a high throughput of reliable and quality offerings. “The demand for consumer electronic devices will stem from developing countries of APAC like India, Bangladesh, Thailand, and Nepal. The high growth potential of these countries in terms of the demand for electronic devices will drive the electronic devices OEMs and electronic manufacturing companies to order a higher number of semiconductor devices for their end-products,” says Chetan Mohan, a lead analyst at Technavio for semiconductor equipment research. Memory manufacturers The growth in the number of microcontroller processes being undertaken in electronic devices has made the memory a vital component of semiconductor devices. Leading market vendors such as #SKHynix, #SanDisk, #Toshiba, and #Samsung have already adopted #3DNAND technology, resulting in further development and commercialization of devices based on 3D NAND architecture. The production of 3D NAND needs new and optimized production equipment due to the complexity involved in its manufacturing. This is compelling chip manufacturing companies such as Samsung, Micron, and Toshiba to revamp and increase their production lines. Also, there are many emerging memory technologies such as magnetic random-access memory ( #MRAM), spin-transfer torque random-access memory ( #STT-RAM), #FeRAM, #phasechangememory ( #PCM), and #resistiverandomaccessmemory ( #RRAM). “The development of new form factors has gained traction in the memory market, and device manufacturers are now demanding memory chips based on transparent and plastic, three-dimensional, and #quantumdot memory technologies. Such developments in the field of memory will create considerable demand for new wafer inspection equipment in the market,” says Chetan. Integrated device manufacturers (IDMs) The high migration to the fabless model of manufacturing will restrict the growth of IDMs in relation to the other two types of production facilities. A new IDM requires a very high initial investment, as well as the upgrading cost for such facilities, is relatively significant. This is hindering the development of IDMs as most semiconductor device manufacturers are looking to cut down on the production expenditure and focus more on enhancing the design and technology of the chips. IDMs such as Intel, Texas Instruments, IBM Microelectronics, Toshiba, Sony, Renesas, STMicroelectronics, Fujitsu, Philips, NXP, and Infineon, manufacture integrated devices. The top vendors highlighted by Technavio’s market research analysts in this report are: ASML Applied Materials KLA-Tencor Lam Research Tokyo Electron

http://www.businesswire.com/news/home/20170717006008/en/Global-Semiconductor-Capital-Equipment-Market-2017-2021-Industry

Saturday, June 10, 2017

GLOBAL GRAPHENE MAGNETIC MEMORY MARKET 2017 – GRAFTECH INTERNATIONAL, GRAPHENE FRONTIERS, GRAPHENE SQUARE, HAYDALE LIMITED

The #Graphene #MagneticMemory Market 2017 examines the performance of the Graphene Magnetic Memory market, enclosing an in-depth judgment of the Graphene Magnetic Memory market state and the competitive landscape globally. This report analyzes the potential of Graphene Magnetic Memory market in the present as well as the future prospects from various angles in detail. The Global Graphene Magnetic Memory Market 2017 report includes Graphene Magnetic Memory industry volume, market Share, market Trends, Graphene Magnetic Memory Growth aspects, a wide range of applications, Utilization ratio, Supply and demand analysis, manufacturing capacity, Graphene Magnetic Memory Price during the Forecast period from 2017 to 2022.

Manufacturers Analysis and Top Sellers of Global Graphene Magnetic Memory Market 2017:

1 AMG Advanced Metallurgical
2 Applied Graphene Materials
3 GrafTech International
4 Graphene Frontiers
5 Graphene Square
6 Haydale Limited
7 Samsung Electronics

https://publicistreport.com/market-research-news/global-graphene-magnetic-memory-market-2017.html