New technique integrates graphene, graphene oxide and reduced graphene oxide onto silicon chips at room temperature Read more: New technique integrates graphene, graphene oxide and reduced graphene oxide onto silicon chips at room temperature

Materials researchers at North Carolina State University have developed a technique that allows them to integrate #graphene, #grapheneoxide (GO) and reduced graphene oxide (rGO) onto silicon substrates at room temperature by using nanosecond pulsed laser annealing (Journal of Applied Physics, "Wafer Scale Integration of Reduced Graphene Oxide by Novel Laser Processing at Room Temperature in Air"). The advance raises the possibility of creating new electronic devices, and the researchers are already planning to use the technique to create smart biomedical sensors.

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