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Monday, September 19, 2016

Researchers at IBM Have Prototyped a 3 Bits-Per-Cell PCM

Researchers at #IBM ’s Zurich laboratory have demonstrated the feasibility of 3 bits-per-cell storage using #phasechangememory ( #PCM ) technology under large temperature fluctuations. The research team, which shared their findings at the International Memory Workshop in Paris, attempts to build a high-speed, non-volatile universal memory technology. Memory with these features has sparked the interest of several groups and been the target of multiple research endeavors. As an example, #3DXPoint is a fast, non-volatile memory chip recently designed by Intel and #Micron. PCM's Potential General-purpose PCM can be either used in a standalone fashion or paired with a flash memory where the PCM acts as an extremely fast cache. Storing the operating system in PCM, a mobile phone would be able to turn on in a few seconds. Data servers and machine-learning algorithms are other potential applications on which PCM can have a significant impact. Tripling the amount of data stored in PCM, IBM scientists hope to bring the PCM chips closer in cost to flash memory. PCM is about 100 times faster than flash memory. Unlike a flash USB stick, which endures only 3000 write cycles, the non-volatile PCM is capable of being rewritten by at least 10 million times. With this unique set of properties, PCM can revolutionize the future of memory industry.

http://www.allaboutcircuits.com/news/researchers-at-ibm-have-prototyped-a-3bits-cell-pcm/

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