Resistive RAM (Random Access Memory) is a form of non-volatile RAM that functions by changing the resistance of a solid dielectric material called memristor. A memristor is an electrical device whose resistance depends on the flux of electric charge through the device whereas a resistive RAM is a device that exhibits memristive behavior and is a special type of memristor. Scalability, high capacity, operation on low voltage, high performance and reliable memory are some of the unique characteristics of a resistive RAM that enables its use in embedded and SSD applications. Also, it requires low programming currents than PCM ( #PhaseChangeMemory ) with a comparable performance with respect to retention and endurance. Computers that use DRAM (Dynamic Random Access Memory) to run programs temporarily store data that is required by the system. The contents of DRAM are immediately lost once the power supply goes off, but with resistive RAM, it is possible to resume a computing session without loss of any data. A typical resistive RAM cell possesses a switching material with different resistance characteristics. This switching material is sandwiched by two metallic electrodes. The switching effect is based on the motion of ions under the influence of an electric field and the ability of switching material to store the ion distribution that causes a notable change in the resistance of device.
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