A hilarious piece in Semiaccurate points out that on launch in July 2015 the claim for #3DXPoint was: 1000x faster than NAND, 1000x the endurance of #NAND, and 10x denser than DRAM.
By IDF 2015 in the autumn of that year the density figure vis a vis DRAM was down from 10x to 4x.
A year later, at IDF2016, the 1000x faster-than-NAND figure had been reduced to 100x.
And the 1000x better endurance than NAND had shrunk to 3x.
No wonder #Micron ’s CEO, a techie, was reported to have looked uncomfortable at the launch.
And just to make matters seem even worse, Semiaccurate says that in private conversations Intel is saying the figures are worse than these.
Of course we don’t know that 3D XPoint is a phase change or not, though most people think it is.
If it is, then Intel fell for one of the oldest tricks in the semiconductor play-book.
For 40 years #phasechangememory has been a useful tool for extracting cash from VCs, budgets from managements and investments from corporates. All of it has been spent to little or no avail earning it the Techno-Ponzi scheme soubriquet in the process. #Intel
http://www.electronicsweekly.com/blogs/mannerisms/delusions/intel-fall-techno-ponzi-scheme-2016-09/
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